Chapter 3 . Gas Source Molecular Beam Epitaxy of Compound Semiconductors
نویسنده
چکیده
Current state-of-the-art epitaxial growth techniques employ various metalorganic and hydride gases to deliver constituent species to the substrate surface, particularly high vapor pressure species such as phosphorus and sulfur. Gas source molecular beam epitaxy (GSMBE) utilizes hydride gas sources and solid elemental sources. The more conventional growth approach, molecular beam epitaxy (MBE), uses only molecular beams derived from the thermal evaporation of elemental or compound solid sources.
منابع مشابه
Chapter 3 . Gas Source Molecular Beam Epitaxy of Compound Semiconductors
This research program utilizes the chemical beam epitaxy laboratory and emphasizes the epitaxial growth of a wide variety of compound semiconductors (both Il-VI and Ill-V), as well as multilayered structures composed of II-VI/II-VI, II-VI/III-V and Ill-V/III-V heterostructures. The chemical beam epitaxy laboratory consists of two gaseous source epitaxy reactors (Il-VI dedicated and Ill-V dedica...
متن کاملDeep ultraviolet photodetectors grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates
Optically-based chemical and biological sensors require optoelectronic devices with specific emission and detection wavelength ranges. Semiconductor optoelectronic devices applicable to this sensing are of particular interest due to their low power consumption, compact size, long lifetime, and low cost. We report the electrical and optical properties of deep UV p-i-n photodiodes (PDs) based on ...
متن کاملPhotonic band-gap waveguide microcavities: Monorails and air bridges
Photonic band-gap monorail and air-bridge waveguide microcavities, operating at the wavelength regime of 1550 nm, are fabricated using GaAs-based compound semiconductors. The fabrication process involves gas-source molecular beam epitaxy, electron-beam lithography, reactive ion etching, and thermal wet oxidation of Al0.93Ga0.07As.The fabrication of the air-bridge microcavity, in particular, als...
متن کاملDevelopment of Compound Semiconductor Devices— In Search of Immense Possibilities —
Many different compound semiconductors can be formed by changing the combination of constituent elements. Properties of alloy semiconductors composed of a plurality of compound semiconductors can be changed in a continuous fashion by changing the composition ratio. A very thin alloy semiconductor multilayer showing interesting properties can be formed by sophisticated epitaxial growth methods s...
متن کاملCompound semiconductor nanotube materials grown and fabricated
A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process. The compound semiconductor nanotube structure was grown by gas-source molecular beam epitaxy. A good cry...
متن کامل